Collapse of carbon nanotubes due to local high-pressure from van der Waals encapsulation

Cheng Hu, Jiajun Chen, Xianliang Zhou, Yufeng Xie, Xinyue Huang, Zhenghan Wu, Saiqun Ma, Zhichun Zhang, Kunqi Xu, Neng Wan, Yueheng Zhang, Qi Liang and Zhiwen Shi ()
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Cheng Hu: Shanghai Jiao Tong University
Jiajun Chen: Shanghai Jiao Tong University
Xianliang Zhou: Shanghai Jiao Tong University
Yufeng Xie: Shanghai Jiao Tong University
Xinyue Huang: Shanghai Jiao Tong University
Zhenghan Wu: Shanghai Jiao Tong University
Saiqun Ma: Shanghai Jiao Tong University
Zhichun Zhang: Shanghai Jiao Tong University
Kunqi Xu: Shanghai Jiao Tong University
Neng Wan: Southeast University
Yueheng Zhang: Shanghai Jiao Tong University
Qi Liang: Shanghai Jiao Tong University
Zhiwen Shi: Shanghai Jiao Tong University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Van der Waals (vdW) assembly of low-dimensional materials has proven the capability of creating structures with on-demand properties. It is predicted that the vdW encapsulation can induce a local high-pressure of a few GPa, which will strongly modify the structure and property of trapped materials. Here, we report on the structural collapse of carbon nanotubes (CNTs) induced by the vdW encapsulation. By simply covering CNTs with a hexagonal boron nitride flake, most of the CNTs (≈77%) convert from a tubular structure to a collapsed flat structure. Regardless of their original diameters, all the collapsed CNTs exhibit a uniform height of ≈0.7 nm, which is roughly the thickness of bilayer graphene. Such structural collapse is further confirmed by Raman spectroscopy, which shows a prominent broadening and blue shift in the Raman G-peak. The vdW encapsulation-induced collapse of CNTs is fully captured by molecular dynamics simulations of the local vdW pressure. Further near-field optical characterization reveals a metal-semiconductor transition in accompany with the CNT structural collapse. Our study provides not only a convenient approach to generate local high-pressure for fundamental research, but also a collapsed-CNT semiconductor for nanoelectronic applications.

Date: 2024
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DOI: 10.1038/s41467-024-47903-3

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