Integrated 2D multi-fin field-effect transistors

Mengshi Yu, Congwei Tan, Yuling Yin, Junchuan Tang, Xiaoyin Gao, Hongtao Liu, Feng Ding () and Hailin Peng ()
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Mengshi Yu: Peking University
Congwei Tan: Peking University
Yuling Yin: Chinese Academy of Sciences
Junchuan Tang: Peking University
Xiaoyin Gao: Peking University
Hongtao Liu: Peking University
Feng Ding: Chinese Academy of Sciences
Hailin Peng: Peking University

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract Vertical semiconducting fins integrated with high-κ oxide dielectrics have been at the centre of the key device architecture that has promoted advanced transistor scaling during the last decades. Single-fin channels based on two-dimensional (2D) semiconductors are expected to offer unique advantages in achieving sub-1 nm fin-width and atomically flat interfaces, resulting in superior performance and potentially high-density integration. However, multi-fin structures integrated with high-κ dielectrics are commonly required to achieve higher electrical performance and integration density. Here we report a ledge-guided epitaxy strategy for growing high-density, mono-oriented 2D Bi2O2Se fin arrays that can be used to fabricate integrated 2D multi-fin field-effect transistors. Aligned substrate steps enabled precise control of both nucleation sites and orientation of 2D fin arrays. Multi-channel 2D fin field-effect transistors based on epitaxially integrated 2D Bi2O2Se/Bi2SeO5 fin-oxide heterostructures were fabricated, exhibiting an on/off current ratio greater than 106, high on-state current, low off-state current, and high durability. 2D multi-fin channel arrays integrated with high-κ oxide dielectrics offer a strategy to improve the device performance and integration density in ultrascaled 2D electronics.

Date: 2024
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DOI: 10.1038/s41467-024-47974-2

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