Atomic-level polarization reversal in sliding ferroelectric semiconductors

Fengrui Sui, Haoyang Li, Ruijuan Qi (), Min Jin (), Zhiwei Lv, Menghao Wu, Xuechao Liu, Yufan Zheng, Beituo Liu, Rui Ge, Yu-Ning Wu (), Rong Huang, Fangyu Yue (), Junhao Chu and Chungang Duan
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Fengrui Sui: East China Normal University
Haoyang Li: East China Normal University
Ruijuan Qi: East China Normal University
Min Jin: Shanghai Dianji University
Zhiwei Lv: East China Normal University
Menghao Wu: Huazhong University of Science and Technology
Xuechao Liu: Chinese Academy of Sciences
Yufan Zheng: East China Normal University
Beituo Liu: East China Normal University
Rui Ge: East China Normal University
Yu-Ning Wu: East China Normal University
Rong Huang: East China Normal University
Fangyu Yue: East China Normal University
Junhao Chu: East China Normal University
Chungang Duan: East China Normal University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.

Date: 2024
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DOI: 10.1038/s41467-024-48218-z

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