Tailoring amorphous boron nitride for high-performance two-dimensional electronics

Cindy Y. Chen, Zheng Sun, Riccardo Torsi, Ke Wang, Jessica Kachian, Bangzhi Liu, Gilbert B. Rayner, Zhihong Chen, Joerg Appenzeller, Yu-Chuan Lin () and Joshua A. Robinson ()
Additional contact information
Cindy Y. Chen: The Pennsylvania State University
Zheng Sun: Purdue University
Riccardo Torsi: The Pennsylvania State University
Ke Wang: The Pennsylvania State University
Jessica Kachian: Intel Corporation
Bangzhi Liu: The Pennsylvania State University
Gilbert B. Rayner: The Kurt J. Lesker Company
Zhihong Chen: Purdue University
Joerg Appenzeller: Purdue University
Yu-Chuan Lin: National Yang Ming Chiao Tung University
Joshua A. Robinson: The Pennsylvania State University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (

Date: 2024
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DOI: 10.1038/s41467-024-48429-4

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