Remote epitaxy of single-crystal rhombohedral WS2 bilayers

Chao Chang, Xiaowen Zhang, Weixuan Li, Quanlin Guo, Zuo Feng, Chen Huang, Yunlong Ren, Yingying Cai, Xu Zhou, Jinhuan Wang, Zhilie Tang, Feng Ding, Wenya Wei (), Kaihui Liu () and Xiaozhi Xu ()
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Chao Chang: South China Normal University
Xiaowen Zhang: South China Normal University
Weixuan Li: South China Normal University
Quanlin Guo: Peking University
Zuo Feng: Peking University
Chen Huang: Peking University
Yunlong Ren: South China Normal University
Yingying Cai: South China Normal University
Xu Zhou: South China Normal University
Jinhuan Wang: South China Normal University
Zhilie Tang: South China Normal University
Feng Ding: Chinese Academy of Sciences
Wenya Wei: South China Normal University
Kaihui Liu: Peking University
Xiaozhi Xu: South China Normal University

Nature Communications, 2024, vol. 15, issue 1, 1-7

Abstract: Abstract Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS2 bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaking in a-plane sapphire, where the influence of atomic steps passes through the lower TMD layer and controls the R-stacking of the upper layer. The as-grown R-stacked bilayers show up-to-30-fold enhancements in carrier mobility (34 cm2V−1s−1), nearly doubled circular helicity (61%) and interfacial ferroelectricity, in contrast to monolayer films. Our work reveals a growth mechanism to obtain stacking-controlled bilayer TMD single crystals, and promotes large-scale applications of R-stacked TMD.

Date: 2024
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DOI: 10.1038/s41467-024-48522-8

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