High-density vertical sidewall MoS2 transistors through T-shape vertical lamination

Quanyang Tao, Ruixia Wu, Xuming Zou (), Yang Chen, Wanying Li, Zheyi Lu, Likuan Ma, Lingan Kong, Donglin Lu, Xiaokun Yang, Wenjing Song, Wei Li, Liting Liu, Shuimei Ding, Xiao Liu, Xidong Duan, Lei Liao () and Yuan Liu ()
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Quanyang Tao: Hunan University
Ruixia Wu: Hunan University
Xuming Zou: Hunan University
Yang Chen: Hunan University
Wanying Li: Hunan University
Zheyi Lu: Hunan University
Likuan Ma: Hunan University
Lingan Kong: Hunan University
Donglin Lu: Hunan University
Xiaokun Yang: Hunan University
Wenjing Song: Hunan University
Wei Li: Hunan University
Liting Liu: Hunan University
Shuimei Ding: Hunan University
Xiao Liu: Hunan University
Xidong Duan: Hunan University
Lei Liao: Hunan University
Yuan Liu: Hunan University

Nature Communications, 2024, vol. 15, issue 1, 1-7

Abstract: Abstract Vertical transistors, in which the source and drain are aligned vertically and the current flow is normal to the wafer surface, have attracted considerable attention recently. However, the realization of high-density vertical transistors is challenging, and could be largely attributed to the incompatibility between vertical structures and conventional lateral fabrication processes. Here we report a T-shape lamination approach for realizing high-density vertical sidewall transistors, where lateral transistors could be pre-fabricated on planar substrates first and then laminated onto vertical substrates using T-shape stamps, hence overcoming the incompatibility between planar processes and vertical structures. Based on this technique, we vertically stacked 60 MoS2 transistors within a small vertical footprint, corresponding to a device density over 108 cm−2. Furthermore, we demonstrate two approaches for scalable fabrication of vertical sidewall transistor arrays, including simultaneous lamination onto multiple vertical substrates, as well as on the same vertical substrate using multi-cycle layer-by-layer laminations.

Date: 2024
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DOI: 10.1038/s41467-024-50185-4

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