Robust single modified divacancy color centers in 4H-SiC under resonant excitation

Zhen-Xuan He, Ji-Yang Zhou, Qiang Li, Wu-Xi Lin, Rui-Jian Liang, Jun-Feng Wang, Xiao-Lei Wen, Zhi-He Hao, Wei Liu, Shuo Ren, Hao Li, Li-Xing You, Rui-Jun Zhang, Feng Zhang, Jian-Shun Tang, Jin-Shi Xu (), Chuan-Feng Li () and Guang-Can Guo
Additional contact information
Zhen-Xuan He: University of Science and Technology of China
Ji-Yang Zhou: University of Science and Technology of China
Qiang Li: ZJU-Hangzhou Global Scientific and Technological Innovation Center
Wu-Xi Lin: University of Science and Technology of China
Rui-Jian Liang: University of Science and Technology of China
Jun-Feng Wang: Sichuan University
Xiao-Lei Wen: University of Science and Technology of China
Zhi-He Hao: University of Science and Technology of China
Wei Liu: University of Science and Technology of China
Shuo Ren: University of Science and Technology of China
Hao Li: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Li-Xing You: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Rui-Jun Zhang: Xiamen University
Feng Zhang: Xiamen University
Jian-Shun Tang: University of Science and Technology of China
Jin-Shi Xu: University of Science and Technology of China
Chuan-Feng Li: University of Science and Technology of China
Guang-Can Guo: University of Science and Technology of China

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to charge variations, hampering the efficacy of spin-photon interfaces. Recent research predicted that modified divacancy color centers can stabilize their charge states, resisting photoionization. This study presents a method for precisely creating single divacancy arrays in 4H-SiC using a focused helium ion beam. Photoluminescence tests reveal consistent emission with minimal linewidth fluctuations (∼50 MHz over 3 h). By measuring the ionization rate for different polytypes of divacancies, we found that the modified divacancies are more robust against resonant excitation. Furthermore, angle-resolved photoluminescence excitation spectra unveil two resonant-transition lines with orthogonal polarizations. Enhanced optical and spin characteristics were notably observed in these color centers compared to those generated through carbon-ion and shallow implantation methods, positioning modified divacancies as promising contenders for advancing quantum networking.

Date: 2024
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DOI: 10.1038/s41467-024-53662-y

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