Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs

Xiang Guan, Yuqing Li, Yuanyuan Meng, Kongxiang Wang, Kebin Lin, Yujie Luo, Jing Wang, Zhongtao Duan, Hong Liu, Liu Yang, Lingfang Zheng, Junpeng Lin, Yalian Weng, Fengxian Xie (), Jianxun Lu () and Zhanhua Wei ()
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Xiang Guan: Fudan University
Yuqing Li: Huaqiao University
Yuanyuan Meng: Huaqiao University
Kongxiang Wang: Fudan University
Kebin Lin: Huaqiao University
Yujie Luo: Fudan University
Jing Wang: Fudan University
Zhongtao Duan: Fudan University
Hong Liu: Fudan University
Liu Yang: Huaqiao University
Lingfang Zheng: Huaqiao University
Junpeng Lin: Huaqiao University
Yalian Weng: Huaqiao University
Fengxian Xie: Fudan University
Jianxun Lu: Huaqiao University
Zhanhua Wei: Huaqiao University

Nature Communications, 2024, vol. 15, issue 1, 1-9

Abstract: Abstract Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm – 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn2+ to oxidize, resulting in detrimental Sn4+-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn4+-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn2+ in the CsSnI3 film. During the moisture treatment, tin tetrahalide is selectively hydrolyzed to Sn(OH)4, which provides sustained protection. As a result, we successfully fabricate second near-infrared window light-emitting diodes emitting at 945 nm, achieving a performance breakthrough with an external quantum efficiency of 7.6% and an operational lifetime reaching 82.6 h.

Date: 2024
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DOI: 10.1038/s41467-024-54160-x

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