Width-dependent continuous growth of atomically thin quantum nanoribbons from nanoalloy seeds in chalcogen vapor

Xufan Li, Samuel Wyss, Emanuil Yanev, Qing-Jie Li, Shuang Wu, Yongwen Sun, Raymond R. Unocic, Joseph Stage, Matthew Strasbourg, Lucas M. Sassi, Yingxin Zhu, Ju Li, Yang Yang, James Hone, Nicholas Borys, P. James Schuck and Avetik R. Harutyunyan ()
Additional contact information
Xufan Li: Inc.
Samuel Wyss: Montana State University
Emanuil Yanev: Columbia University
Qing-Jie Li: Massachusetts Institute of Technology
Shuang Wu: Inc.
Yongwen Sun: The Pennsylvania State University
Raymond R. Unocic: Oak Ridge National Laboratory
Joseph Stage: Montana State University
Matthew Strasbourg: Montana State University
Lucas M. Sassi: Inc.
Yingxin Zhu: The Pennsylvania State University
Ju Li: Massachusetts Institute of Technology
Yang Yang: The Pennsylvania State University
James Hone: Columbia University
Nicholas Borys: Montana State University
P. James Schuck: Columbia University
Avetik R. Harutyunyan: Inc.

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Nanoribbons (NRs) of atomic layer transition metal dichalcogenides (TMDs) can boost the rapidly emerging field of quantum materials owing to their width-dependent phases and electronic properties. However, the controllable downscaling of width by direct growth and the underlying mechanism remain elusive. Here, we demonstrate the vapor-liquid-solid growth of single crystal of single layer NRs of a series of TMDs (MeX2: Me = Mo, W; X = S, Se) under chalcogen vapor atmosphere, seeded by pre-deposited and respective transition metal-alloyed nanoparticles that also control the NR width. We find linear dependence of growth rate on supersaturation, known as a criterion for continues growth mechanism, which decreases with decreasing of NR width driven by the Gibbs-Thomson effect. The NRs show width-dependent photoluminescence and strain-induced quantum emission signatures with up to ≈ 90% purity of single photons. We propose the path and underlying mechanism for width-controllable growth of TMD NRs for applications in quantum optoelectronics.

Date: 2024
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DOI: 10.1038/s41467-024-54413-9

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