Strong hole-photon coupling in planar Ge for probing charge degree and strongly correlated states

Franco Palma, Fabian Oppliger, Wonjin Jang, Stefano Bosco, Marián Janík, Stefano Calcaterra, Georgios Katsaros, Giovanni Isella, Daniel Loss and Pasquale Scarlino ()
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Franco Palma: École Polytéchnique Fédérale de Lausanne (EPFL)
Fabian Oppliger: École Polytéchnique Fédérale de Lausanne (EPFL)
Wonjin Jang: École Polytéchnique Fédérale de Lausanne (EPFL)
Stefano Bosco: University of Basel
Marián Janík: Institute of Science and Technology Austria
Stefano Calcaterra: Politecnico di Milano
Georgios Katsaros: Institute of Science and Technology Austria
Giovanni Isella: Politecnico di Milano
Daniel Loss: University of Basel
Pasquale Scarlino: École Polytéchnique Fédérale de Lausanne (EPFL)

Nature Communications, 2024, vol. 15, issue 1, 1-12

Abstract: Abstract Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as front-runners for future hole-based quantum processors. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot (DQD) in planar Ge, and microwave photons in a high-impedance (Zr = 1.3 kΩ) resonator based on an array of superconducting quantum interference devices (SQUIDs). Our investigation reveals vacuum-Rabi splittings with coupling strengths up to g0/2π = 260 MHz, and a cooperativity of C ~ 100, dependent on DQD tuning. Furthermore, utilizing the frequency tunability of our resonator, we explore the quenched energy splitting associated with strong Coulomb correlation effects in Ge QDs. The observed enhanced coherence of the strongly correlated excited state signals the presence of distinct symmetries within related spin functions, serving as a precursor to the strong coupling between photons and spin-charge hybrid qubits in planar Ge. This work paves the way towards coherent quantum connections between remote hole qubits in planar Ge, required to scale up hole-based quantum processors.

Date: 2024
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DOI: 10.1038/s41467-024-54520-7

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