Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

Lukas Seidel (), Teren Liu, Omar Concepción, Bahareh Marzban, Vivien Kiyek, Davide Spirito, Daniel Schwarz, Aimen Benkhelifa, Jörg Schulze, Zoran Ikonic, Jean-Michel Hartmann, Alexei Chelnokov, Jeremy Witzens, Giovanni Capellini, Michael Oehme, Detlev Grützmacher and Dan Buca ()
Additional contact information
Lukas Seidel: University of Stuttgart
Teren Liu: Forschungszentrum Juelich
Omar Concepción: Forschungszentrum Juelich
Bahareh Marzban: RWTH Aachen
Vivien Kiyek: Forschungszentrum Juelich
Davide Spirito: IHP - Leibniz Institut für innovative Mikroelektronik
Daniel Schwarz: University of Stuttgart
Aimen Benkhelifa: University of Stuttgart
Jörg Schulze: Friedrich-Alexander-Universität Erlangen-Nürnberg
Zoran Ikonic: University of Leeds
Jean-Michel Hartmann: LETI
Alexei Chelnokov: LETI
Jeremy Witzens: RWTH Aachen
Giovanni Capellini: IHP - Leibniz Institut für innovative Mikroelektronik
Michael Oehme: University of Stuttgart
Detlev Grützmacher: Forschungszentrum Juelich
Dan Buca: Forschungszentrum Juelich

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.

Date: 2024
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DOI: 10.1038/s41467-024-54873-z

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