Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature

Shuxiang Wu (), Zhihao He, Minghui Gu, Lizhu Ren, Jibin Li, Bo Deng, Di Wang, Xinhao Guo, Wanjiong Li, Mingyi Chen, Yijun Chen, Meng Meng (), Quanlin Ye (), Bing Shen, Xinman Chen, Jiandong Guo, Guozhong Xing, Iam Keong Sou and Shuwei Li
Additional contact information
Shuxiang Wu: Sun Yat-sen University
Zhihao He: The Hong Kong University of Science and Technology
Minghui Gu: Chinese Academy of Sciences
Lizhu Ren: National University of Singapore
Jibin Li: South China Normal University
Bo Deng: Hangzhou Normal University
Di Wang: Beijing 100029; University of Chinese Academy of Sciences
Xinhao Guo: Sun Yat-sen University
Wanjiong Li: Sun Yat-sen University
Mingyi Chen: Sun Yat-sen University
Yijun Chen: Sun Yat-sen University
Meng Meng: Chinese Academy of Sciences
Quanlin Ye: Hangzhou Normal University
Bing Shen: Sun Yat-sen University
Xinman Chen: South China Normal University
Jiandong Guo: Chinese Academy of Sciences
Guozhong Xing: Beijing 100029; University of Chinese Academy of Sciences
Iam Keong Sou: The Hong Kong University of Science and Technology
Shuwei Li: Sun Yat-sen University

Nature Communications, 2024, vol. 15, issue 1, 1-7

Abstract: Abstract The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet Fe3GaTe2 using molecular beam epitaxy. The epitaxial Fe3GaTe2 films exhibit robust ferromagnetism, exemplified by high Curie temperature (TC = 420 K) and large perpendicular magnetic anisotropy (PMA) constant KU = 6.7 × 105 J/m3 at 300 K for nine-unit-cell film. Notably, the ferromagnetic order is preserved even in the one-unit-cell film with TC reaching 345 K, benefiting from the strong PMA (KU = 1.8×105 J/m3 at 300 K). In comparison to exfoliated Fe3GaTe2 flakes, our epitaxial films with the same thickness show the significant enhancement of TC, which could be ascribed to the tensile strain effect from the substrate. The successful realization of wafer-scale ferromagnetic Fe3GaTe2 films with TC far above room temperature represents a substantial advancement (in some aspects or some fields, e.g. material science), paving the way for the development of 2D magnet-based spintronic devices.

Date: 2024
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DOI: 10.1038/s41467-024-54936-1

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