Grain engineering for efficient near-infrared perovskite light-emitting diodes

Sung-Doo Baek, Wenhao Shao, Weijie Feng, Yuanhao Tang, Yoon Ho Lee, James Loy, William B. Gunnarsson, Hanjun Yang, Yuchen Zhang, M. Bilal Faheem, Poojan Indrajeet Kaswekar, Harindi R. Atapattu, Jiajun Qin, Aidan H. Coffey, Jee Yung Park, Seok Joo Yang, Yu-Ting Yang, Chenhui Zhu, Kang Wang, Kenneth R. Graham, Feng Gao, Quinn Qiao, L. Jay Guo, Barry P. Rand and Letian Dou ()
Additional contact information
Sung-Doo Baek: Purdue University
Wenhao Shao: Purdue University
Weijie Feng: University of Michigan
Yuanhao Tang: Purdue University
Yoon Ho Lee: Purdue University
James Loy: Princeton University
William B. Gunnarsson: Princeton University
Hanjun Yang: Purdue University
Yuchen Zhang: Syracuse University
M. Bilal Faheem: Syracuse University
Poojan Indrajeet Kaswekar: Syracuse University
Harindi R. Atapattu: University of Kentucky
Jiajun Qin: Linköping University
Aidan H. Coffey: Lawrence Berkeley National Laboratory
Jee Yung Park: Purdue University
Seok Joo Yang: Purdue University
Yu-Ting Yang: Purdue University
Chenhui Zhu: Lawrence Berkeley National Laboratory
Kang Wang: Purdue University
Kenneth R. Graham: University of Kentucky
Feng Gao: Linköping University
Quinn Qiao: Syracuse University
L. Jay Guo: University of Michigan
Barry P. Rand: Princeton University
Letian Dou: Purdue University

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr−1 m−2. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.

Date: 2024
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-024-55075-3 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-55075-3

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-024-55075-3

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().