Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms

Jaeyong Jeong, Seong Kwang Kim, Yoon-Je Suh, Jisung Lee, Joonyoung Choi, Joon Pyo Kim, Bong Ho Kim, Juhyuk Park, Joonsup Shim, Nahyun Rheem, Chan Jik Lee, Younjung Jo, Dae-Myeong Geum, Seung-Young Park, Jongmin Kim and Sanghyeon Kim ()
Additional contact information
Jaeyong Jeong: Korea Advanced Institute of Science and Technology (KAIST)
Seong Kwang Kim: Korea Advanced Institute of Science and Technology (KAIST)
Yoon-Je Suh: Korea Advanced Institute of Science and Technology (KAIST)
Jisung Lee: Korea Basic Science Institute (KBSI)
Joonyoung Choi: Kyungpook National University (KNU)
Joon Pyo Kim: Korea Advanced Institute of Science and Technology (KAIST)
Bong Ho Kim: Korea Advanced Institute of Science and Technology (KAIST)
Juhyuk Park: Korea Advanced Institute of Science and Technology (KAIST)
Joonsup Shim: Korea Advanced Institute of Science and Technology (KAIST)
Nahyun Rheem: Korea Advanced Institute of Science and Technology (KAIST)
Chan Jik Lee: Korea Advanced Institute of Science and Technology (KAIST)
Younjung Jo: Kyungpook National University (KNU)
Dae-Myeong Geum: Inha University
Seung-Young Park: Korea Basic Science Institute (KBSI)
Jongmin Kim: Korea Advanced Nano Fab Center (KANC)
Sanghyeon Kim: Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2024, vol. 15, issue 1, 1-10

Abstract: Abstract Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III–V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor $$\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)$$ I D g m − 1 of $$0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}$$ 0.21 Vmm S − 1 at 4 K using more than 10 times less power consumption than CMOS.

Date: 2024
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DOI: 10.1038/s41467-024-55077-1

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