Spin-polarized lasing in manganese doped perovskite microcrystals

Penghao Li, Zhonghao Zhou, Guangliu Ran, Tongjin Zhang, Zhengjun Jiang, Haidi Liu, Wenkai Zhang, Yongli Yan, Jiannian Yao, Haiyun Dong () and Yong Sheng Zhao ()
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Penghao Li: Chinese Academy of Sciences
Zhonghao Zhou: Chinese Academy of Sciences
Guangliu Ran: Beijing Normal University
Tongjin Zhang: Chinese Academy of Sciences
Zhengjun Jiang: Chinese Academy of Sciences
Haidi Liu: Chinese Academy of Sciences
Wenkai Zhang: Beijing Normal University
Yongli Yan: Chinese Academy of Sciences
Jiannian Yao: Chinese Academy of Sciences
Haiyun Dong: Chinese Academy of Sciences
Yong Sheng Zhao: Chinese Academy of Sciences

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Spin-polarized lasers have demonstrated many superiorities over conventional lasers in both performance and functionalities. Hybrid organic-inorganic perovskites are emerging spintronic materials with great potential for advancing spin-polarized laser technology. However, the rapid carrier spin relaxation process in hybrid perovskites presents a major bottleneck for spin-polarized lasing. Here we report the identification and successful suppression of the spin relaxation mechanism in perovskites for the experimental realization of spin-polarized perovskite lasers. The electron-hole exchange interaction is identified as the decisive spin relaxation mechanism hindering the realization of spin-polarized lasing in perovskite microcrystals. An ion doping strategy is employed accordingly to introduce a new energy level in perovskites, which enables a long carrier spin lifetime by suppressing the electron-hole exchange interaction. As a result, spin-polarized lasing is achieved in the doped perovskite microcrystals. Moreover, the doped cation is a magnetic species allowing for the magnetic field control of the spin-polarized perovskite lasing. This work unlocks the potential of perovskites for spin-polarized lasers, providing guidance for the design of perovskites towards spintronic devices.

Date: 2024
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DOI: 10.1038/s41467-024-55234-6

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