Influence of inter-dot Coulomb repulsion and exchange interactions on conductance through double quantum dot

G. Michałek () and B. R. Bułka

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 52, issue 3, 411-419

Abstract: Conductance and other physical quantities are calculated in double quantum dots (DQD) connected in series in the limit of coherent tunnelling using a Green's function technique. The inter-dot Coulomb repulsion and the exchange interaction are studied by means of the Kotliar and Ruckenstein slave-boson mean-field approach. The crossover from the atomic to the molecular limit is analyzed in order to show how the conductance in the model depends on the competition between the level broadening (dot-lead coupling) and the dot-dot transmission. The double Kondo effect was found in the gate voltage characteristics of the conductance in the atomic limit. In the case, when each dot accommodates one electron, the Kondo resonant states are formed between dots and their adjacent leads and transport is dominated by hopping between these two resonances. In the molecular limit the conductance vanishes for sufficiently low gate voltages, which means the Kondo effect disappeared. For small dot-lead coupling the transport characteristics are very sensitive on the influence of the inter-dot Coulomb repulsion and the position of the local energy level. The resonance region is widened with increase of the inter-dot Coulomb interactions while the exchange interaction has opposite influence. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 72.15.Qm Scattering mechanisms and Kondo effect; 73.63.-b Electronic transport in nanoscale materials and structures; 73.63.Kv Quantum dots (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00315-6

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