Electronic properties of multi-quantum dot structures in Cd 1-x Zn x S alloy semiconductors

N. Safta (), A. Sakly, H. Mejri and M. A. Zaïdi

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 53, issue 1, 35-38

Abstract: In this paper, we present a theoretical study of the quantized electronic states in Cd 1-x Zn x S quantum dots. The shape of the confining potential, the subband energies and their eigen envelope wave functions are calculated by solving a one-dimensional Schrödinger equation. Electrons and holes are assumed to be confined in dots having a flattened cylindrical geometry with a finite barrier height at the boundary. Optical absorption measurements are used to fit the bandgap edge of the Cd 1-x Zn x S nanocrystals. An analysis of the electron band parameters has been made as a function of Zn composition. Two main features were revealed: (i) a multiplicity in Cd 1-x Zn x S quantum dots with different crystalline sizes has been found to fit accurately experimental data in the composition range 0 ≤x ≤0.2; (ii) the fit did not, however, show a multiplicity for x higher than 0.4. On the other hand, we have calculated the energy level structure of coupled Cd 1-x Zn x S semiconductor quantum dots using the tight-binding approximation. As is found the Zn composition x=0.4 is expected to be the most favorable to give rise a superlattice behavior for the Cd 1-x Zn x S quantum dots studied. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 73.21.La Quantum dots; 73.22.-f Electronic structure of nanoscale materials: clusters; nanoparticles; nanotubes; and nanocrystals; 71.55.Gs II-VI semiconductors (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00350-3

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