Determination of the density of states in high-T c thin films using FET-type microstructures

T. M. Mishonov () and M. V. Stoev ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 54, issue 4, 419-421

Abstract: A simple electronic experiment using a field-effect-transistor–type microstructure is suggested. The thin superconductor layer forms the source-drain channel of a layered structure across which an AC current is applied. It is found necessary to measure the second harmonic of the source-gate voltage, and the third harmonic of the source-drain voltage; these electronic measurements then give the logarithmic derivative of the density of states, which is an important consideration when fitting parameters of the band structure. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 74.78.-w Superconducting films and low-dimensional structures; 71.20.-b Electron density of states and band structure of crystalline solids; 74.78.Bz High-Tc films; 73.50.Lw Thermoelectric effects (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2007-00022-x

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