Coulomb-induced nonlinearities in GaN microdisks

S. Shojaei (), F. Troiani, A. Asgari, M. Kalafi and G. Goldoni

The European Physical Journal B: Condensed Matter and Complex Systems, 2008, vol. 65, issue 4, 505-509

Abstract: Due to their wurzite structure, GaN quantum wells and dots arecharacterized by large built-in piezoelectric fields.These induce a spatial separation between the confined electron andholes, thus favouring the formation of electric dipoles.Here, we theoretically investigate the effects of the long-range,dipole-dipole interaction between two excitons in a GaN/Al x Ga 1-x Nmicrodisk.These Coulomb interactions are shown to strongly affect the biexcitonground state. In particular, they induce strong spatial correlationsbetween the two excitons and result in biexciton binding energiesof the order of 1 meV. Copyright Springer 2008

Keywords: 42.65.-k Nonlinear optics; 78.67.-n Optical properties of low-dimensional; mesoscopic; and nanoscale materials and structures; 42.55.Sa Microcavity and microdisk lasers (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1140/epjb/e2008-00357-8

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