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Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling

M. Ghanaatshoar () and V. Fallahi

The European Physical Journal B: Condensed Matter and Complex Systems, 2011, vol. 80, issue 3, 401-405

Abstract: We study the effect of the Dresselhaus spin-orbit interaction on the magnetoresistance (MR) of a quasi-one-dimensional ferromagnetic semiconductor containing a sharp domain wall. The MR is calculated in the ballistic regime, within the Landauer-Büttiker formalism. The results show that the Dresselhaus spin-orbit coupling which induces an effective magnetic field along the wire, reduces the domain wall MR. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2011

Date: 2011
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Persistent link: https://EconPapers.repec.org/RePEc:spr:eurphb:v:80:y:2011:i:3:p:401-405

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DOI: 10.1140/epjb/e2011-10626-0

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