Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance

Sergey E. Savel’ev (), Fabio Marchesoni and Alexander M. Bratkovsky

The European Physical Journal B: Condensed Matter and Complex Systems, 2013, vol. 86, issue 12, 1-6

Abstract: We show how a simple model nanoswitch can perform as a memory resistor. Its resistance is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule’s heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit 1/f 2 → 1/f crossover, in agreement with recent experimental results. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Keywords: Mesoscopic and Nanoscale Systems (search for similar items in EconPapers)
Date: 2013
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Citations: View citations in EconPapers (3)

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DOI: 10.1140/epjb/e2013-40966-4

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