Growth of a New Ternary BON Crystal on Si(100) by Plasma-Assisted MOCVD and Study on the Effects of Fed Gas and Growth Temperature

G. C. Chen, S.-B. Lee and J.-H. Boo ()
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G. C. Chen: Department of Chemistry and Institute of Basic Science, Sungkyunkwun University, Suwon, 440-746, Korea
S.-B. Lee: Department of Chemistry and Institute of Basic Science, Sungkyunkwun University, Suwon, 440-746, Korea
J.-H. Boo: Department of Chemistry and Institute of Basic Science, Sungkyunkwun University, Suwon, 440-746, Korea

Surface Review and Letters (SRL), 2003, vol. 10, issue 04, 629-634

Abstract: A new ternaryBOxNycrystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed thatBOxNycrystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure ofBOxNywas as similar to that ofH3BO3in this study.

Keywords: BON crystal; plasma-assisted MOCVD; organaborate precursor; silicon substrate (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1142/S0218625X03005475

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