BUCKLING MORPHOLOGIES AND INTERFACIAL PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED ON FLOAT GLASS SUBSTRATES

Ya-Dong Sun, Qi-Xiang Chen, Yu-Fei Feng, Jun Chen and Sen-Jiang Yu ()
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Ya-Dong Sun: Department of Physics, China Jiliang University, Hangzhou 310018, P. R. China
Qi-Xiang Chen: Department of Physics, China Jiliang University, Hangzhou 310018, P. R. China
Yu-Fei Feng: Department of Physics, China Jiliang University, Hangzhou 310018, P. R. China
Jun Chen: Zhejiang Zhongli Energy Efficiency Glass Manufacture Co., Ltd, Hangzhou 311228, P. R. China
Sen-Jiang Yu: Department of Physics, China Jiliang University, Hangzhou 310018, P. R. China

Surface Review and Letters (SRL), 2015, vol. 22, issue 04, 1-8

Abstract: We report on the buckling morphologies and interfacial properties of silicon nitride films deposited on float glass substrates. The coexistence of straight-sided and telephone cord buckles can be observed in the silicon nitride films after annealing at a high temperature. The straight-sided structure is metastable and can spontaneously evolve into the telephone cord structure accompanied by the increase in the buckle width and height. The geometric parameters of various buckling structures (including the straight blister, telephone cord and their transition state) have been measured by optical microscopy and atomic force microscopy (AFM). The internal stress and interfacial adhesion of the films are evaluated and analyzed based on the continuum elastic theory. It is valid to measure the interfacial properties of thin films by simplifying the telephone cord buckle as a straight-sided structure. This measurement technique is suitable for all the film systems provided that the buckles can form in the film.

Keywords: Silicon nitride film; buckling; interface; adhesion energy; internal stress (search for similar items in EconPapers)
Date: 2015
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Citations: View citations in EconPapers (1)

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DOI: 10.1142/S0218625X15500468

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