CHARACTERIZATION OF CARBON NITRIDE NANOPARTICLES PREPARED BY LASER ABLATION IN LIQUID FOR OPTOELECTRONIC APPLICATION

Khawla Khashan () and Mayyadah H. Mohsin
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Mayyadah H. Mohsin: The Department of Applied Sciences, University of Technology, Iraq

Surface Review and Letters (SRL), 2015, vol. 22, issue 04, 1-6

Abstract: In this work, carbon nitride(C3N4)nanoparticles (NPs) were synthesized by pulse laser ablation of graphite in ammonium solution, and deposited on silicon substrates by spray. Fourier transform infrared spectroscopy (FTIR), UV-visible spectrophotometer and transmission electron microscopy (TEM) were used to study bonding, absorption, size and morphology of the produce NPs. The FTIR absorption peaks at 2121.6, 1631.7 and 1384 cm-1stretching vibration bond, it is inferred for theC≡N,C=NandC–N, respectively. Bonds suggests the formation,C3N4NPs. UV absorption peaks coincide with the electronic transitions corresponding to the formation,C3N4NPs with 3.98 eV optical bandgap. The TEM show the aggregation of theC3N4NPs with size ranges from 4 to 83 nm, and also the leaf-like structure are shown in the structure ofC3N4suspension. High performance rectifyingC3N4/Siheterojunction with a rectifying ratio exceeding 345 atV = 5Vwas obtained, with high photoresponsivity of 2.33 A/W at 600 nm.The results show thatC3N4NPs on silicon substrates will act as very good candidates for making high efficiency photodiodes.

Keywords: Carbon nitride; laser ablation in liquid; optoelectronic application (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0218625X15500559

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