USE PROSPECTS IN MICROELECTRONICS FOR POLYCRYSTALLINE SILICON FILM STRUCTURES WITH p–n JUNCTION

Raimjon Aliev and Erkin Muhtarov

Perspectives of Innovations, Economics and Business (PIEB), 2009, vol. 02, 4

Abstract: The paper discusses perspectives of elaborating microelectronic and optoelectronic devices on polycrystalline silicon films. The I-V features of structures with p-n-junction, formed by using methods of р-type conductivity layer grow, thermal diffusion and ion-implantation of boron atoms into n-type polycrystalline silicon layer are compared. The I-V feature with S-form curve of the investigated structures conditioned by changing of the conductivities of base and grain boundaries under thermal processing are revealed.

Keywords: Research; and; Development/Tech; Change/Emerging; Technologies (search for similar items in EconPapers)
Date: 2009
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Persistent link: https://EconPapers.repec.org/RePEc:ags:jrpieb:94559

DOI: 10.22004/ag.econ.94559

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