Physical Properties of Zno: Ga2O3 Thin Film Prepared by Microwave-Assisted Pyrolysis: The Role Ga2O3

Hendra Dwi Gunawan, Sulhadi., Putut Marwoto and Fristian Rifita
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Hendra Dwi Gunawan: Physics Department, Universitas Negeri Semarang, Semarang, Indonesia
Sulhadi.: Physics Department, Universitas Negeri Semarang, Semarang, Indonesia
Putut Marwoto: Physics Department, Universitas Negeri Semarang, Semarang, Indonesia
Fristian Rifita: Physics Department, Universitas Negeri Semarang, Semarang, Indonesia

International Journal of Research and Innovation in Applied Science, 2025, vol. 10, issue 5, 781-789

Abstract: We have successfully developed high-quality polycrystalline ZnO: Ga₂O₃ thin films using the microwave-assisted spray pyrolysis method. The variation of Ga₂ O₃ doping (0-6%) resulted in significant changes in the morphology, crystal structure, and optical properties of the thin films. The 3% Ga₂ O₃-doped sample exhibited excellent crystal quality with the smallest Full Width at Half Maximum (FWHM) value of 0.16°, high transmittance (96%), and a suitable band gap (3.21 eV) for applications in sensor systems, optoelectronic devices, and solar cells. This study presents a significant advancement in the development of high-quality ZnO: Ga₂O₃ thin films with superior characteristics for various applications.

Date: 2025
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