Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Elmira A. Jafarova, Ziraddin Y. Sadygov, Ali Huseyn A. Dovlatov, Lala A. Aliyeva, Eldar S. Tapdygov and Kamala A. Askerova
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Elmira A. Jafarova: Azerbaijan National Academy of Sciences G.M.Abdullayev Institute of Physics
Ziraddin Y. Sadygov: Joint Institute for Nuclear Research, Dubna.
Ali Huseyn A. Dovlatov: Department of Physics, Azerbaijan State Oil and Industry University, Baku.
Lala A. Aliyeva: Institute of Physics Azerbaijan National Academy of Sciences Baku.
Eldar S. Tapdygov: Institute of Physics Azerbaijan National Academy of Sciences, Baku.
Kamala A. Askerova: Institute of Physics Azerbaijan National Academy of Sciences, Baku.

European Journal of Engineering and Technology Research, 2018, vol. 3, issue 4, 61-64

Abstract: There have been investigated reactive properties of silicon avalanche photodiodes (MAPD- Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f= (50-500) kHz.By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance).The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase j appearing between current and voltage and it is shown that at Ufor=0 V the j = 80o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.

Keywords: Microchannel Avalanche Photodiode; P-N Junction Capacitance; P-N Junction Inductance; Inversion Voltage (search for similar items in EconPapers)
Date: 2018
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Persistent link: https://EconPapers.repec.org/RePEc:epw:ejeng0:v:3:y:2018:i:4:id:60701

DOI: 10.24018/ejeng.2018.3.4.701

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