A Brief Review of Growth Techniques for Obtaining of III-V Semiconductor Compounds

Erick Gastellóu, G. García, A. M. Herrera, C. Morales, R. García, G. A. Hirata, M. Robles, J. A. Rodríguez and I. E. García
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Erick Gastellóu: División de Tecnologías de la Información y Comunicación, Universidad Tecnológica de Puebla (UTP), Puebla, México
G. García: Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla, México
A. M. Herrera: Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla, México
C. Morales: Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla, México
R. García: Departamento de Investigación en Física, Universidad de Sonora (USON), Hermosillo, Sonora, México
G. A. Hirata: Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México (UNAM), Ensenada, Baja California Norte, México
M. Robles: División de Tecnologías de la Información y Comunicación, Universidad Tecnológica de Puebla (UTP), Puebla, México
J. A. Rodríguez: División de Tecnologías de la Información y Comunicación, Universidad Tecnológica de Puebla (UTP), Puebla, México
I. E. García: Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla, México

European Journal of Engineering and Technology Research, 2019, vol. 4, issue 9, 17-21

Abstract: Electronic devices have essential importance in our quality of life. Our species has multiple comforts and benefits obtained by current technology, such as microelectronics, optoelectronics, and nanotechnology. However, few are interested in the different physical phenomena that are behind our technology. This paper presents a brief review of four growth techniques for the obtaining of III-V semiconductors compounds. Techniques such as metalorganic chemical vapor deposition, hot filament chemical vapor deposition, liquid phase epitaxy, and molecular beam epitaxy are described in a simple way to motivate the understanding of the theoretical concepts that make operated our technology.

Keywords: Growth; Layers; Epitaxy; Semiconductor Compound (search for similar items in EconPapers)
Date: 2019
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Persistent link: https://EconPapers.repec.org/RePEc:epw:ejeng0:v:4:y:2019:i:9:id:61477

DOI: 10.24018/ejeng.2019.4.9.1477

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