High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee and Hassan Maher
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Gwen Rolland: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Christophe Rodriguez: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Guillaume Gommé: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Abderrahim Boucherif: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Ahmed Chakroun: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Meriem Bouchilaoun: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Marie Clara Pepin: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Faissal El Hamidi: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Soundos Maher: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Richard Arès: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada
Tom MacElwee: GaNSystems Inc., 1145 Innovation, Ottawa, ON K2K 3G8, Canada
Hassan Maher: Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 2500 Bd. de l’Université, Sherbrooke, QC J1K 2R1, Canada

Energies, 2021, vol. 14, issue 19, 1-9

Abstract: In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm −3 p doping, a V th of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

Keywords: HEMT; normally-OFF; P-GaN; CBE (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
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