Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method

Barbara Swatowska, Wiesław Powroźnik, Halina Czternastek, Gabriela Lewińska, Tomasz Stapiński, Rafał Pietruszka, Bartłomiej S. Witkowski and Marek Godlewski
Additional contact information
Barbara Swatowska: Department of Electronics, Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland
Wiesław Powroźnik: Department of Electronics, Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland
Halina Czternastek: Institute of Physics, Pedagogical University of Cracow, ul. Podchorążych 2, 30-084 Krakow, Poland
Gabriela Lewińska: Department of Electronics, Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland
Tomasz Stapiński: Department of Electronics, Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland
Rafał Pietruszka: Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
Bartłomiej S. Witkowski: Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
Marek Godlewski: Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Energies, 2021, vol. 14, issue 19, 1-17

Abstract: The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon and glass substrates. The structures were deposited using diethylzinc (DEZ) and deionized water as zinc and oxygen precursors. A precursor of trimethylaluminum (TMA) was used to introduce the aluminum dopant. The present study of ALD-deposited ZnO and AZO films was motivated by their applications in photovoltaics. We attempted to expose several properties of such films. Structural, optical (including ellipsometric measurements) and electrical investigations were performed. We discussed the relations between samples doped with different Al fractions and their properties.

Keywords: AZO thin films; ALD technique; optical properties; structural properties; electrical parameters (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.mdpi.com/1996-1073/14/19/6271/pdf (application/pdf)
https://www.mdpi.com/1996-1073/14/19/6271/ (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:gam:jeners:v:14:y:2021:i:19:p:6271-:d:648626

Access Statistics for this article

Energies is currently edited by Ms. Agatha Cao

More articles in Energies from MDPI
Bibliographic data for series maintained by MDPI Indexing Manager ().