Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Myeong Sang Jeong, Yonghwan Lee, Ka-Hyun Kim, Sungjin Choi, Min Gu Kang, Soo Min Kim and Hee-eun Song
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Myeong Sang Jeong: Photovoltaic Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
Yonghwan Lee: Convergence Materials Research Center, Innovative Technology Research Division, Gumi Electronics and Information Technology Research Institute (GERI), Gumi 39171, Korea
Ka-Hyun Kim: Department of Physics, Chungbuk National University, Cheongju 28644, Korea
Sungjin Choi: Photovoltaic Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
Min Gu Kang: Photovoltaic Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
Soo Min Kim: Convergence Materials Research Center, Innovative Technology Research Division, Gumi Electronics and Information Technology Research Institute (GERI), Gumi 39171, Korea
Hee-eun Song: Photovoltaic Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea

Energies, 2021, vol. 14, issue 3, 1-11

Abstract: In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘ C to 950 ∘ C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘ C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘ C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

Keywords: passivated emitter and rear contact solar cell; numerical simulation analysis; Ag crystallite; silicon-metal interface; surface recombination; TCAD (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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