Estimation of Peak Junction Hotspot Temperature in Three-Level TNPC-IGBT Modules for Traction Inverters Through Chip-Level Modeling and Experimental Validation

Ahmed H. Okilly, Peter Nkwocha Harmony, Cheolgyu Kim, Do-Wan Kim and Jeihoon Baek ()
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Ahmed H. Okilly: Electrical & Electronics and Communication Engineering Department, Koreatech University, Cheonan-si 31253, Republic of Korea
Peter Nkwocha Harmony: Electrical & Electronics and Communication Engineering Department, Koreatech University, Cheonan-si 31253, Republic of Korea
Cheolgyu Kim: Electrical & Electronics and Communication Engineering Department, Koreatech University, Cheonan-si 31253, Republic of Korea
Do-Wan Kim: Electrical & Electronics and Communication Engineering Department, Koreatech University, Cheonan-si 31253, Republic of Korea
Jeihoon Baek: Electrical & Electronics and Communication Engineering Department, Koreatech University, Cheonan-si 31253, Republic of Korea

Energies, 2025, vol. 18, issue 14, 1-30

Abstract: Monitoring the peak junction hotspot temperature in IGBT modules is critical for ensuring the reliability of high-power industrial multilevel inverters, particularly when operating under extreme thermal conditions, such as in traction applications. This study presents a comprehensive chip-level analytical loss and thermal model for estimation of the peak junction hotspot temperature in a three-level T-type neutral-point-clamped (TNPC) IGBT module. The developed model includes a detailed analytical assessment of conduction and switching losses, along with transient thermal network modeling, based on the actual electrical and thermal characteristics of the IGBT module. Additionally, a hybrid thermal–electrical stress experimental setup, designed to replicate real operating conditions, was implemented for a balanced three-phase inverter circuit utilizing a Semikron three-level IGBT module, with testing currents reaching 100 A and a critical case temperature of 125 °C. The analytically estimated module losses and peak junction hotspot temperatures were validated through direct experimental measurements. Furthermore, thermal simulations were conducted with Semikron’s SemiSel benchmark tool to cross-validate the accuracy of the thermo-electrical model. The outcomes show a relative estimation error of less than 1% when compared to experimental data and approximately 1.15% for the analytical model. These findings confirm the model’s accuracy and enhance the reliability evaluation of TNPC-IGBT modules in extreme thermal environments.

Keywords: three-level inverters; IGBT modules; chip-level loss modeling; Foster thermal network; critical case temperature; peak junction hotspot temperature; hybrid stress testing; thermal simulation (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2025
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