Model of PE-CVD Apparatus: Verification and Simulations

J. Geiser, V. Buck and M. Arab

Mathematical Problems in Engineering, 2010, vol. 2010, 1-32

Abstract:

In this paper, we present a simulation of chemical vapor deposition with metallic bipolar plates. In chemical vapor deposition, a delicate optimization between temperature, pressure and plasma power is important to obtain homogeneous deposition. The aim is to reduce the number of real-life experiments in a given CVD plasma reactor. Based on the large physical parameter space, there are a hugh number of possible experiments. A detailed study of the physical experiments in a CVD plasma reactor allows to reduce the problem to an approximate mathematical model, which is the underlying transport-reaction model. Significant regions of the CVD apparatus are approximated and physical parameters are transferred to the mathematical parameters. Such an approximation reduces the mathematical parameter space to a realistic number of numerical experiments. The numerical results are discussed with physical experiments to give a valid model for the assumed growth and we could reduce expensive physical experiments.

Date: 2010
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Persistent link: https://EconPapers.repec.org/RePEc:hin:jnlmpe:407561

DOI: 10.1155/2010/407561

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