Existence of Weak Solutions to a Class of Degenerate Semiconductor Equations Modeling Avalanche Generation

Bin Wu

Mathematical Problems in Engineering, 2009, vol. 2009, 1-22

Abstract:

We consider the drift-diffusion model with avalanche generation for evolution in time of electron and hole densities ð ‘› , ð ‘ coupled with the electrostatic potential 𠜓 in a semiconductor device. We also assume that the diffusion term is degenerate. The existence of local weak solutions to this Dirichlet-Neumann mixed boundary value problem is obtained.

Date: 2009
References: Add references at CitEc
Citations:

Downloads: (external link)
http://downloads.hindawi.com/journals/MPE/2009/873683.pdf (application/pdf)
http://downloads.hindawi.com/journals/MPE/2009/873683.xml (text/xml)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:hin:jnlmpe:873683

DOI: 10.1155/2009/873683

Access Statistics for this article

More articles in Mathematical Problems in Engineering from Hindawi
Bibliographic data for series maintained by Mohamed Abdelhakeem ().