On the Energy Gaps Induced by a Semiconducting Substrate in the Graphene Density of States

Sergey Davydov and Alexander Lebedev

Modern Applied Science, 2015, vol. 9, issue 12, 234

Abstract: The analytical expressions for the densities of states for graphene formed on semiconducting substrates are obtained. The problem on the induced gap is studied thoroughly. It is shown, that graphene electronic spectrum according to the relation between the system’s parameters can contain two gaps or one gap, overlapping with the energy gap of substrate. The gaps width dependences on the coupling regimes (tight and weak) are obtained. Numerical estimations are fulfilled for the epitaxial graphene on 6H-SiC{0001}.

Date: 2015
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
https://ccsenet.org/journal/index.php/mas/article/download/41973/29150 (application/pdf)
https://ccsenet.org/journal/index.php/mas/article/view/41973 (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:ibn:masjnl:v:9:y:2015:i:12:p:234

Access Statistics for this article

More articles in Modern Applied Science from Canadian Center of Science and Education Contact information at EDIRC.
Bibliographic data for series maintained by Canadian Center of Science and Education ().