Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

Zhaoli Gao (), Sheng Wang, Joel Berry, Qicheng Zhang, Julian Gebhardt, William M. Parkin, Jose Avila, Hemian Yi, Chaoyu Chen, Sebastian Hurtado-Parra, Marija Drndić, Andrew M. Rappe, David J. Srolovitz, James M. Kikkawa, Zhengtang Luo, Maria C. Asensio, Feng Wang () and A. T. Charlie Johnson ()
Additional contact information
Zhaoli Gao: University of Pennsylvania
Sheng Wang: University of California at Berkeley
Joel Berry: University of Pennsylvania
Qicheng Zhang: University of Pennsylvania
Julian Gebhardt: University of Pennsylvania
William M. Parkin: University of Pennsylvania
Jose Avila: Synchrotron-SOLEIL and Université Paris-Saclay Saint-Aubin
Hemian Yi: Synchrotron-SOLEIL and Université Paris-Saclay Saint-Aubin
Chaoyu Chen: Synchrotron-SOLEIL and Université Paris-Saclay Saint-Aubin
Sebastian Hurtado-Parra: University of Pennsylvania
Marija Drndić: University of Pennsylvania
Andrew M. Rappe: University of Pennsylvania
David J. Srolovitz: University of Pennsylvania
James M. Kikkawa: University of Pennsylvania
Zhengtang Luo: The Hong Kong University of Science and Technology
Maria C. Asensio: Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), Valencia Institute of Materials Science (ICMUV), MATINÉE: CSIC Associated Unit-(ICMM-ICMUV Valencia University)
Feng Wang: University of California at Berkeley
A. T. Charlie Johnson: University of Pennsylvania

Nature Communications, 2020, vol. 11, issue 1, 1-10

Abstract: Abstract The properties of van der Waals (vdW) materials often vary dramatically with the atomic stacking order between layers, but this order can be difficult to control. Trilayer graphene (TLG) stacks in either a semimetallic ABA or a semiconducting ABC configuration with a gate-tunable band gap, but the latter has only been produced by exfoliation. Here we present a chemical vapor deposition approach to TLG growth that yields greatly enhanced fraction and size of ABC domains. The key insight is that substrate curvature can stabilize ABC domains. Controllable ABC yields ~59% were achieved by tailoring substrate curvature levels. ABC fractions remained high after transfer to device substrates, as confirmed by transport measurements revealing the expected tunable ABC band gap. Substrate topography engineering provides a path to large-scale synthesis of epitaxial ABC-TLG and other vdW materials.

Date: 2020
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DOI: 10.1038/s41467-019-14022-3

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