Large lattice distortions and size-dependent bandgap modulation in epitaxial halide perovskite nanowires

Eitan Oksenberg, Aboma Merdasa, Lothar Houben, Ifat Kaplan-Ashiri, Amnon Rothman, Ivan G. Scheblykin, Eva L. Unger and Ernesto Joselevich ()
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Eitan Oksenberg: Department of Materials and Interfaces Weizmann Institute of Science
Aboma Merdasa: Helmholtz-Zentrum Berlin GmbH, Young Investigator Group Hybrid Materials Formation and Scaling
Lothar Houben: Weizmann Institute of Science
Ifat Kaplan-Ashiri: Weizmann Institute of Science
Amnon Rothman: Department of Materials and Interfaces Weizmann Institute of Science
Ivan G. Scheblykin: Lund University
Eva L. Unger: Helmholtz-Zentrum Berlin GmbH, Young Investigator Group Hybrid Materials Formation and Scaling
Ernesto Joselevich: Department of Materials and Interfaces Weizmann Institute of Science

Nature Communications, 2020, vol. 11, issue 1, 1-11

Abstract: Abstract Metal-halide perovskites have been shown to be remarkable and promising optoelectronic materials. However, despite ongoing research from multiple perspectives, some fundamental questions regarding their optoelectronic properties remain controversial. One reason is the high-variance of data collected from, often unstable, polycrystalline thin films. Here we use ordered arrays of stable, single-crystal cesium lead bromide (CsPbBr3) nanowires grown by surface-guided chemical vapor deposition to study fundamental properties of these semiconductors in a one-dimensional model system. Specifically, we uncover the origin of an unusually large size-dependent luminescence emission spectral blue-shift. Using multiple spatially resolved spectroscopy techniques, we establish that bandgap modulation causes the emission shift, and by correlation with state-of-the-art electron microscopy methods, we reveal its origin in substantial and uniform lattice rotations due to heteroepitaxial strain and lattice relaxation. Understanding strain and its effect on the optoelectronic properties of these dynamic materials, from the atomic scale up, is essential to evaluate their performance limits and fundamentals of charge carrier dynamics.

Date: 2020
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DOI: 10.1038/s41467-020-14365-2

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