Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Taojie Zhou, Mingchu Tang (), Guohong Xiang, Boyuan Xiang, Suikong Hark, Mickael Martin, Thierry Baron, Shujie Pan, Jae-Seong Park, Zizhuo Liu, Siming Chen (), Zhaoyu Zhang () and Huiyun Liu ()
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Taojie Zhou: The Chinese University of Hong Kong
Mingchu Tang: University College London
Guohong Xiang: The Chinese University of Hong Kong
Boyuan Xiang: The Chinese University of Hong Kong
Suikong Hark: The Chinese University of Hong Kong
Mickael Martin: Univ. Grenoble Alpes, CNRS, CEA-LETI, MINATEC, LTM
Thierry Baron: Univ. Grenoble Alpes, CNRS, CEA-LETI, MINATEC, LTM
Shujie Pan: University College London
Jae-Seong Park: University College London
Zizhuo Liu: University College London
Siming Chen: University College London
Zhaoyu Zhang: The Chinese University of Hong Kong
Huiyun Liu: University College London

Nature Communications, 2020, vol. 11, issue 1, 1-7

Abstract: Abstract Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

Date: 2020
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DOI: 10.1038/s41467-020-14736-9

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