Electrochemically-stable ligands bridge the photoluminescence-electroluminescence gap of quantum dots

Chaodan Pu, Xingliang Dai, Yufei Shu, Meiyi Zhu, Yunzhou Deng, Yizheng Jin () and Xiaogang Peng ()
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Chaodan Pu: Zhejiang University
Xingliang Dai: Zhejiang University
Yufei Shu: Zhejiang University
Meiyi Zhu: Zhejiang University
Yunzhou Deng: Zhejiang University
Yizheng Jin: Zhejiang University
Xiaogang Peng: Zhejiang University

Nature Communications, 2020, vol. 11, issue 1, 1-10

Abstract: Abstract Colloidal quantum dots are promising emitters for quantum-dot-based light-emitting-diodes. Though quantum dots have been synthesized with efficient, stable, and high colour-purity photoluminescence, inheriting their superior luminescent properties in light-emitting-diodes remains challenging. This is commonly attributed to unbalanced charge injection and/or interfacial exciton quenching in the devices. Here, a general but previously overlooked degradation channel in light-emitting-diodes, i.e., operando electrochemical reactions of surface ligands with injected charge carriers, is identified. We develop a strategy of applying electrochemically-inert ligands to quantum dots with excellent luminescent properties to bridge their photoluminescence-electroluminescence gap. This material-design principle is general for boosting electroluminescence efficiency and lifetime of the light-emitting-diodes, resulting in record-long operational lifetimes for both red-emitting light-emitting-diodes (T95 > 3800 h at 1000 cd m−2) and blue-emitting light-emitting-diodes (T50 > 10,000 h at 100 cd m−2). Our study provides a critical guideline for the quantum dots to be used in optoelectronic and electronic devices.

Date: 2020
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DOI: 10.1038/s41467-020-14756-5

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