Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition

Ioannis Paradisanos, Shivangi Shree, Antony George, Nadine Leisgang, Cedric Robert, Kenji Watanabe, Takashi Taniguchi, Richard J. Warburton, Andrey Turchanin, Xavier Marie, Iann C. Gerber () and Bernhard Urbaszek ()
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Ioannis Paradisanos: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Shivangi Shree: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Antony George: Friedrich Schiller University Jena
Nadine Leisgang: University of Basel
Cedric Robert: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Richard J. Warburton: University of Basel
Andrey Turchanin: Friedrich Schiller University Jena
Xavier Marie: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Iann C. Gerber: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Bernhard Urbaszek: Université de Toulouse, INSA-CNRS-UPS, LPCNO

Nature Communications, 2020, vol. 11, issue 1, 1-7

Abstract: Abstract Combining MoS2 monolayers to form multilayers allows to access new functionalities. Deterministic assembly of large area van der Waals structures requires concrete indicators of successful interlayer coupling in bilayers grown by chemical vapor deposition. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in both as-grown MoS2 homobilayer samples and in artificially stacked bilayers from monolayers, all grown by chemical vapor deposition. We show that hole delocalization over the bilayer is only allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about t⊥ = 49 meV. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.

Date: 2020
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DOI: 10.1038/s41467-020-16023-z

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