X-ray radiation excited ultralong (>20,000 seconds) intrinsic phosphorescence in aluminum nitride single-crystal scintillators

Richeng Lin, Wei Zheng (), Liang Chen, Yanming Zhu, MengXuan Xu, Xiaoping Ouyang and Feng Huang ()
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Richeng Lin: Sun Yat-sen University
Wei Zheng: Sun Yat-sen University
Liang Chen: Northwest Institute of Nuclear Technology
Yanming Zhu: Sun Yat-sen University
MengXuan Xu: Xi’an Jiaotong University
Xiaoping Ouyang: Northwest Institute of Nuclear Technology
Feng Huang: Sun Yat-sen University

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Phosphorescence is a fascinating photoelectronic phenomenon usually observed in rare-earth-doped inorganic crystals and organic molecular crystals, owning great potential in optical information storage, color display and biological dosimetry. Here, we present an ultralong intrinsic phosphorescence (>20,000 seconds) in AlN single-crystal scintillator through X-ray excitation. We suggest that the long afterglow emission originates from the intra-band transition related to native nitrogen vacancy. Some excited states formed by absorbing X-ray photons cannot satisfy the parity difference between initial and final states required by transition selection rule, so they cannot return to the ground state directly through radiation transitions but through several phonon-assisted intra-band transitions slowly. During this process, a long-term broad-spectra phosphorescence emission is formed. Investigating the X-ray excited phosphorescence emission in the AlN is of great significance to understanding the mechanism of phosphorescence in inorganic materials, and to realizing the practical applications in high-energy ray dosimetry.

Date: 2020
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DOI: 10.1038/s41467-020-18221-1

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