Constructing phase boundary in AgNbO3 antiferroelectrics: pathway simultaneously achieving high energy density and efficiency

Nengneng Luo (), Kai Han, Matthew J. Cabral, Xiaozhou Liao, Shujun Zhang (), Changzhong Liao, Guangzu Zhang, Xiyong Chen, Qin Feng, Jing-Feng Li and Yuezhou Wei ()
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Nengneng Luo: Guangxi University
Kai Han: Guangxi University
Matthew J. Cabral: The University of Sydney
Xiaozhou Liao: The University of Sydney
Shujun Zhang: University of Wollongong
Changzhong Liao: The University of Hong Kong
Guangzu Zhang: Huazhong University of Science and Technology
Xiyong Chen: Guangxi University
Qin Feng: Guangxi University
Jing-Feng Li: Tsinghua University
Yuezhou Wei: Guangxi University

Nature Communications, 2020, vol. 11, issue 1, 1-10

Abstract: Abstract Dielectric capacitors with high energy storage density (Wrec) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high Wrec of 6.3 J cm-3 with η of 90% can be simultaneously achieved by constructing a room temperature M2–M3 phase boundary in (1-x)AgNbO3-xAgTaO3 solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20–150 °C and excellent cycling reliability up to 106 cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelectric features relevant to the local structure heterogeneity and antiferroelectric ordering, being confirmed by scanning transmission electron microscopy and synchrotron X-ray diffraction. This work provides a good paradigm for developing new lead-free dielectrics for high-power energy storage applications.

Date: 2020
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DOI: 10.1038/s41467-020-18665-5

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