Exciton–phonon coupling strength in single-layer MoSe2 at room temperature

Donghai Li, Chiara Trovatello, Stefano Dal Conte, Matthias Nuß, Giancarlo Soavi, Gang Wang, Andrea C. Ferrari (), Giulio Cerullo () and Tobias Brixner ()
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Donghai Li: Institut für Physikalische und Theoretische Chemie, Universität Würzburg, Am Hubland
Chiara Trovatello: Politecnico di Milano
Stefano Dal Conte: Politecnico di Milano
Matthias Nuß: Institut für Physikalische und Theoretische Chemie, Universität Würzburg, Am Hubland
Giancarlo Soavi: Cambridge Graphene Centre, University of Cambridge
Gang Wang: Cambridge Graphene Centre, University of Cambridge
Andrea C. Ferrari: Cambridge Graphene Centre, University of Cambridge
Giulio Cerullo: Politecnico di Milano
Tobias Brixner: Institut für Physikalische und Theoretische Chemie, Universität Würzburg, Am Hubland

Nature Communications, 2021, vol. 12, issue 1, 1-9

Abstract: Abstract Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton–phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton–phonon coupling strength has not been measured at room temperature. Here, we use two-dimensional micro-spectroscopy to determine exciton–phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time induced by the coupling between A excitons and A′1 optical phonons. Analysis of beating maps combined with simulations provides the exciton–phonon coupling. We get a Huang–Rhys factor ~1, larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton–phonon coupling also in other heterogeneous semiconducting systems, with a spatial resolution ~260 nm, and provides design-relevant parameters for the development of optoelectronic devices.

Date: 2021
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DOI: 10.1038/s41467-021-20895-0

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