Optoelectronic mixing with high-frequency graphene transistors

A. Montanaro, W. Wei, D. Fazio, U. Sassi, G. Soavi, P. Aversa, A. C. Ferrari, H. Happy, P. Legagneux and E. Pallecchi ()
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A. Montanaro: Thales Research and Technology
W. Wei: Univ. Lille, CNRS, Centrale Lille, Univ. Polyechnique Hauts-de-France, UMR8520 - IEMN Institut d’Electronique, de Microélectronique et de Nanotechnologie
D. Fazio: Cambridge Graphene Centre, University of Cambridge
U. Sassi: Cambridge Graphene Centre, University of Cambridge
G. Soavi: Cambridge Graphene Centre, University of Cambridge
P. Aversa: Thales Research and Technology
A. C. Ferrari: Cambridge Graphene Centre, University of Cambridge
H. Happy: Univ. Lille, CNRS, Centrale Lille, Univ. Polyechnique Hauts-de-France, UMR8520 - IEMN Institut d’Electronique, de Microélectronique et de Nanotechnologie
P. Legagneux: Thales Research and Technology
E. Pallecchi: Univ. Lille, CNRS, Centrale Lille, Univ. Polyechnique Hauts-de-France, UMR8520 - IEMN Institut d’Electronique, de Microélectronique et de Nanotechnologie

Nature Communications, 2021, vol. 12, issue 1, 1-10

Abstract: Abstract Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level (EF). At low EF ( 130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.)

Date: 2021
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DOI: 10.1038/s41467-021-22943-1

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