Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck

Qianchun Weng (), Le Yang, Zhenghua An (), Pingping Chen, Alexander Tzalenchuk, Wei Lu () and Susumu Komiyama
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Qianchun Weng: The Chinese Academy of Sciences
Le Yang: Fudan University
Zhenghua An: Fudan University
Pingping Chen: The Chinese Academy of Sciences
Alexander Tzalenchuk: National Physical Laboratory
Wei Lu: The Chinese Academy of Sciences
Susumu Komiyama: The Chinese Academy of Sciences

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract Since the invention of transistors, the flow of electrons has become controllable in solid-state electronics. The flow of energy, however, remains elusive, and energy is readily dissipated to lattice via electron-phonon interactions. Hence, minimizing the energy dissipation has long been sought by eliminating phonon-emission process. Here, we report a different scenario for facilitating energy transmission at room temperature that electrons exert diffusive but quasiadiabatic transport, free from substantial energy loss. Direct nanothermometric mapping of electrons and lattice in current-carrying GaAs/AlGaAs devices exhibit remarkable discrepancies, indicating unexpected thermal isolation between the two subsystems. This surprising effect arises from the overpopulated hot longitudinal-optical (LO) phonons generated through frequent emission by hot electrons, which induce equally frequent LO-phonon reabsorption (“hot-phonon bottleneck”) cancelling the net energy loss. Our work sheds light on energy manipulation in nanoelectronics and power-electronics and provides important hints to energy-harvesting in optoelectronics (such as hot-carrier solar-cells).

Date: 2021
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DOI: 10.1038/s41467-021-25094-5

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