Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas

Luca Sortino (), Panaiot G. Zotev, Catherine L. Phillips, Alistair J. Brash, Javier Cambiasso, Elena Marensi, A. Mark Fox, Stefan A. Maier, Riccardo Sapienza and Alexander I. Tartakovskii ()
Additional contact information
Luca Sortino: University of Sheffield
Panaiot G. Zotev: University of Sheffield
Catherine L. Phillips: University of Sheffield
Alistair J. Brash: University of Sheffield
Javier Cambiasso: Imperial College London
Elena Marensi: Am Campus 1
A. Mark Fox: University of Sheffield
Stefan A. Maier: Ludwig-Maximilians-Universität München
Riccardo Sapienza: Imperial College London
Alexander I. Tartakovskii: University of Sheffield

Nature Communications, 2021, vol. 12, issue 1, 1-9

Abstract: Abstract Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe2 to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 104 times brighter photoluminescence than in WSe2 placed on low-refractive-index SiO2 pillars. We show that the key to these observations is the increase on average by a factor of 5 of the quantum efficiency of the emitters coupled to the nano-antennas. This further allows us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors.

Date: 2021
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DOI: 10.1038/s41467-021-26262-3

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