High-performance hysteresis-free perovskite transistors through anion engineering

Huihui Zhu, Ao Liu, Kyu In Shim, Haksoon Jung, Taoyu Zou, Youjin Reo, Hyunjun Kim, Jeong Woo Han, Yimu Chen, Hye Yong Chu, Jun Hyung Lim, Hyung-Jun Kim, Sai Bai () and Yong-Young Noh ()
Additional contact information
Huihui Zhu: Pohang University of Science and Technology
Ao Liu: Pohang University of Science and Technology
Kyu In Shim: Pohang University of Science and Technology
Haksoon Jung: Pohang University of Science and Technology
Taoyu Zou: Pohang University of Science and Technology
Youjin Reo: Pohang University of Science and Technology
Hyunjun Kim: Pohang University of Science and Technology
Jeong Woo Han: Pohang University of Science and Technology
Yimu Chen: Harbin Institute of Technology
Hye Yong Chu: Samsung Display Inc.
Jun Hyung Lim: Samsung Display Inc.
Hyung-Jun Kim: Samsung Display Inc.
Sai Bai: University of Electronic Science and Technology of China
Yong-Young Noh: Pohang University of Science and Technology

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V−1 s−1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.

Date: 2022
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DOI: 10.1038/s41467-022-29434-x

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