Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Seunguk Song, Aram Yoon, Jong-Kwon Ha, Jihoon Yang, Sora Jang, Chloe Leblanc, Jaewon Wang, Yeoseon Sim, Deep Jariwala, Seung Kyu Min, Zonghoon Lee () and Soon-Yong Kwon ()
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Seunguk Song: Ulsan National Institute of Science and Technology (UNIST)
Aram Yoon: Ulsan National Institute of Science and Technology (UNIST)
Jong-Kwon Ha: Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST)
Jihoon Yang: Ulsan National Institute of Science and Technology (UNIST)
Sora Jang: Ulsan National Institute of Science and Technology (UNIST)
Chloe Leblanc: University of Pennsylvania
Jaewon Wang: Ulsan National Institute of Science and Technology (UNIST)
Yeoseon Sim: Ulsan National Institute of Science and Technology (UNIST)
Deep Jariwala: University of Pennsylvania
Seung Kyu Min: Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS)
Zonghoon Lee: Ulsan National Institute of Science and Technology (UNIST)
Soon-Yong Kwon: Ulsan National Institute of Science and Technology (UNIST)

Nature Communications, 2022, vol. 13, issue 1, 1-11

Abstract: Abstract The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achievement of high-quality edge contacts. Here we present a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, PtTe2. The use of PtTe2 as an epitaxial template enables the lateral growth of monolayer MoS2 to achieve a PtTe2-MoS2 MSJ with the thinnest possible, seamless atomic interface. The synthesized lateral heterojunction enables the reduced dimensions of Schottky barriers and enhanced carrier injection compared to counterparts composed of a vertical 3D metal contact. Furthermore, facile position-selected growth of PtTe2-MoS2 MSJ arrays using conventional lithography can facilitate the design of device layouts with high processability, while providing low contact resistivity and ultrashort transfer length on wafer scales.

Date: 2022
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DOI: 10.1038/s41467-022-32582-9

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