Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films

Zhan Hua Li, Jia Xing He, Xiao Hu Lv, Ling Fei Chi, Kingsley O. Egbo, Ming- De Li (), Tooru Tanaka, Qi Xin Guo, Kin Man Yu and Chao Ping Liu ()
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Zhan Hua Li: Shantou University
Jia Xing He: Shantou University
Xiao Hu Lv: Shantou University
Ling Fei Chi: Shantou University
Kingsley O. Egbo: City University of Hong Kong
Ming- De Li: Shantou University
Tooru Tanaka: Saga University
Qi Xin Guo: Saga University
Kin Man Yu: City University of Hong Kong
Chao Ping Liu: Shantou University

Nature Communications, 2022, vol. 13, issue 1, 1-16

Abstract: Abstract As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.

Date: 2022
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DOI: 10.1038/s41467-022-34117-8

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