Room-temperature valley transistors for low-power neuromorphic computing

Jiewei Chen, Yue Zhou, Jianmin Yan, Jidong Liu, Lin Xu, Jingli Wang, Tianqing Wan, Yuhui He, Wenjing Zhang and Yang Chai ()
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Jiewei Chen: The Hong Kong Polytechnic University
Yue Zhou: The Hong Kong Polytechnic University
Jianmin Yan: The Hong Kong Polytechnic University
Jidong Liu: Shenzhen University
Lin Xu: The Hong Kong Polytechnic University
Jingli Wang: Fudan University
Tianqing Wan: The Hong Kong Polytechnic University
Yuhui He: Huazhong University of Science and Technology
Wenjing Zhang: Shenzhen University
Yang Chai: The Hong Kong Polytechnic University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te). We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing.

Date: 2022
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DOI: 10.1038/s41467-022-35396-x

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